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Space-Saving Device Offers Low Max. RthJC of 0.36 °C/W and Wettable Flanks to Improve Thermal Performance and Solderability in Industrial Applications MALVERN, Pa., May 21, 2025 (GLOBE NEWSWIRE) --...
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MALVERN, Pa., Sept. 23, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 200 V n-channel MOSFET that offers industry-low typical on-resistance of 61 mΩ at 10...
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Device Offers Industry-Low RDS(ON) of 3.5 mΩ and FOM of 172 mΩ*nC in 10.89 mm² Package MALVERN, Pa., Feb. 10, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a...
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MALVERN, Pa., Aug. 12, 2019 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 60 V TrenchFET® Gen IV n-channel power MOSFET that is the industry’s first optimized...
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MALVERN, Pa., Nov. 27, 2017 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 25 V n-channel TrenchFET® Gen IV power MOSFET that features the industry’s lowest...