Latest News and Press Releases

Want to stay updated on the latest news?

Sign into Reader Account Create Reader Account

June 04, 2019 09:00 ET | Source: NXP USA, Inc.

NXP Sets a New Efficiency Benchmark for RF Energy with GaN Transistor

News Highlights: First GaN-on-SiC transistor for 2.45 GHz RF energy surpasses the efficiency of most magnetronsSolid-state enables smart control, low maintenance, and ease of use compared to...