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Santa Clara, CA and Kyoto, Japan, March 12, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor U.S.A., LLC, today announced they will participate in APEC 2025, the premier power electronics conference and...
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Santa Clara, CA and Kyoto, Japan, March 05, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that the EcoGaN™ series of 650V GaN HEMTs in the TOLL package has been adopted for AI server...
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Santa Clara, CA and Kyoto, Japan, Dec. 10, 2024 (GLOBE NEWSWIRE) -- ROHM Co., Ltd. (ROHM) today announced that they have entered into a strategic partnership with TSMC on the development and volume...
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Santa Clara, CA and Kyoto, Japan, May 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they will present new power semiconductor solutions, with a special focus on wide bandgap...
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Santa Clara, CA and Kyoto, Japan, Feb. 26, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its 650V GaN device (EcoGaN™) in the C4 Duo, a 45W output USB-C charger from...
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Santa Clara, CA and Kyoto, Japan, Aug. 31, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the BM3G0xxMUV-LB series of power stage ICs with built-in 650V GaN HEMTs and gate drivers. The...
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Santa Clara, CA and Kyoto, Japan, March 21, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced ultra-high-speed control IC technology that maximizes the performance of GaN and other...
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Santa Clara, CA and Kyoto, Japan, March 22, 2022 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced their new 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) which increase gate withstand voltage...