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HUDSON, New Hampshire (EE. UU.) y HSINCHU, Taiwán, Aug. 07, 2019 (GLOBE NEWSWIRE) -- Las empresas GTAT Corporation (que opera como GT Advanced Technologies o GTAT) y GlobalWafers Co., Ltd....
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HUDSON, N.H. und HSINCHU, Taiwan, Aug. 08, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, d/b/a GT Advanced Technologies (GTAT) und GlobalWafers Co., Ltd. (GWC) haben eine langfristige Vereinbarung...
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HUDSON, N.H. en HSINCHU, Taiwan, Aug. 08, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, d/b/a GT Advanced Technologies (GTAT) en GlobalWafers Co., Ltd. (GWC) hebben een langetermijnovereenkomst...
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ニューハンプシャー州ハドソンおよび台湾、新竹発 , Aug. 08, 2019 (GLOBE NEWSWIRE) -- GTATコーポレーション (GTAT Corporation、商号: GTアドバンスト・テクノロジーズ (GT Advanced Technologies: GTAT)) と、グローバルウェーハズ (GlobalWafers Co., Ltd.: GWC)...
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美国新罕布什尔州HUDSON及中国台湾新竹, Aug. 08, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation【全称为GT Advanced Technologies（GTAT）】与GlobalWafers Co.,...
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HUDSON, N.H. and HSINCHU, Taiwan, Aug. 06, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, d/b/a GT Advanced Technologies (GTAT) and GlobalWafers Co., Ltd. (GWC) have entered into a long-term agreement...
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ХАДСОН, штат Нью-Гемпшир, July 31, 2019 (GLOBE NEWSWIRE) -- Корпорация GTAT, зарегистрированная под именем GT Advanced Technologies (GTAT), представляет свой материал карбида кремния CrystX ™ (SiC)...
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HUDSON, N.H., July 31, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, d/b/a GT Advanced Technologies (GTAT), presenta il suo materiale CrystX™ al carburo di silicio (SiC) da utilizzare in applicazioni...
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HUDSON, N.H., July 31, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, handelsnaam GT Advanced Technologies (GTAT), introduceert het materiaal CrystX™ siliciumcarbide (SiC) voor toepassingen in...
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HUDSON, New Hampshire, 31 juill. 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, propriétaire de GT Advanced Technologies (GTAT), présente son matériau en carbure de silicium CrystX™ (SiC) destiné à être...